2

Semiconductor Group

SPP80N03L

Thermal Characteristics

Parameter

Values

Symbol

Unit

typ.

max.

min.

Characteristics

-

-

0.5

K/W

Thermal resistance, junction - case

-

Thermal resistance, junction - ambient, leded

-

62

-

-

-

-

62

40

SMD version, device on PCB:

@ min. footprint

Electrical Characteristics, at

Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Unit

Values

min.

max.

typ.

Static Characteristics

Drain- source breakdown voltage

-

30

-

V

Gate threshold voltage,

2

1.6

1.2

Zero gate voltage drain current

-

µA

1

100

0.1

-

Gate-source leakage current

-

10

nA

100

Drain-Source on-state resistance

-

-

0.0053

0.0033

0.008

0.006

Ω

1current limited by bond wire

2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain

connection. PCB is vertical without blown air.