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SPB80N03L Datasheet(PDF) 3 Page - Siemens Semiconductor Group |
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SPB80N03L Datasheet(HTML) 3 Page - Siemens Semiconductor Group |
3 / 9 page 3 Semiconductor Group SPP80N03L Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , ID = 80 A gfs 30 125 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 4640 5900 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 1915 2500 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 785 1000 Turn-on delay time VDD = 15 V, VGS = 4.5 V, ID = 80 A, RG = 1.25 Ω td(on) - 30 45 ns Rise time VDD = 15 V, VGS = 4.5 V, ID = 80 A, RG = 1.25 Ω tr - 50 75 Turn-off delay time VDD = 15 V, VGS = 4.5 V, ID = 80 A, RG = 1.25 Ω td(off) - 40 60 Fall time VDD = 15 V, VGS = 4.5 V, ID = 80 A, RG = 1.25 Ω tf - 50 75 |
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