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2SC2209 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SC2209 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 4 page Power Transistors 1 Publication date: January 2003 SJD00097BED 2SC2209 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA0963 ■ Features • Large collector power dissipation P C • Output of 5 W can be obtained by a complementary pair with 2SA0963 ■ Absolute Maximum Ratings T a = 25°C ■ Electrical Characteristics T a = 25°C ± 3°C Unit: mm Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 1 mA, IE = 050 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, I B = 040 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 01 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, I C = 010 µA Forward current transfer ratio * 1, 2 hFE VCE = 5 V, IC = 1 A 80 220 Collector-emitter saturation voltage VCE(sat) IC = 1.5 A, IB = 0.15 A 1 V Base-emitter saturation voltage VBE(sat) IC = 2 A, I B = 0.2 A 1.5 V Transition frequency fT VCB = 5 V, IE = − 0.5 A, f = 200 MHz 150 MHz Collector output capacitance Cob VCB = 5 V, IE = 0, f = 1 MHz 50 pF (Common base, input open circuited) 1: Emitter 2: Collector 3: Base TO-126A-A1 Package 7.5 +0.5 –0.1 2.9±0.2 0.75±0.1 0.5±0.1 2.3±0.2 4.6±0.2 0.5±0.1 1.26±0.1 123 120 ° Rank Q R hFE 80 to 160 120 to 220 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open) VEBO 5V Collector current IC 1.5 A Peak collector current ICP 3A Collector power dissipation * PC 10 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) *: TC = 25°C |
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