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CMS06 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # CMS06
Description  TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

CMS06 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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CMS06
2003-02-17
1
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CMS06
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
· Forward voltage: VFM = 0.37 V (max)
· Average forward current: IF (AV) = 2.0 A
· Repetitive peak reverse voltage: VRRM = 30 V
· Suitable for compact assembly due to small surface-mount package
“M−FLATTM” (Toshiba package name)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
30
V
Average forward current
IF (AV)
2.0
(Note)
A
Peak one cycle surge forward current
(non-repetitive)
IFSM
40 (50 Hz)
A
Junction temperature
Tj
-40~125
°C
Storage temperature
Tstg
-40~150
°C
Note: Tℓ
= 82.8°C: Rectangular waveform (a = 180°C), VR = 15 V
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
VFM (1)
IFM = 0.5 A
¾
0.26
¾
VFM (2)
IFM = 1.0 A
¾
0.28
¾
Peak forward voltage
VFM (3)
IFM = 2.0 A
¾
0.32
0.37
V
IRRM
VRRM = 5 V
¾
0.09
¾
Repetitive peak reverse current
IRRM
VRRM = 30 V
¾
1.4
3.0
mA
Junction capacitance
Cj
VR = 10 V, f = 1.0 MHz
¾
130
¾
pF
Device mounted on a ceramic board
(soldering land: 2 mm
´ 2 mm)
¾
¾
60
Thermal resistance
Rth (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm
´ 6 mm)
¾
¾
135
°C/W
Thermal resistance
Rth (j-ℓ)
¾
¾
¾
16
°C/W
Unit: mm
JEDEC
JEITA
TOSHIBA
3-4E1A
Weight: 0.023 g (typ.)


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