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CS61574A-IL1 Datasheet(PDF) 30 Page - Cirrus Logic |
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CS61574A-IL1 Datasheet(HTML) 30 Page - Cirrus Logic |
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30 / 44 page  Transformers Recommended transmitter and receiver trans- former specifications are shown in Table A2. The transformers in Table A3 have been tested and recommended for use with the CS61574A and CS61575. Refer to the "Telecom Transformer Se- lection Guide" for detailed schematics which show how to connect the line interface IC with a particular transformer. In applications where it is advantageous to use a single transmitter transformer for 75 Ω and 120Ω E1 applications, a 1:1.26 transformer may be used. Although transmitter return loss will be re- duced for 75 Ω applications, the pulse amplitude will be correct across a 75 Ω load. Selecting an Oscillator Crystal Specific crystal parameters are required for proper operation of the jitter attenuator. It is rec- ommended that the Crystal Semiconductor CXT6176 crystal be used for T1 applications and the CXT8192 crystal be used for E1 applications. Designing for AT&T 62411 For additional information on the requirements of AT&T 62411 and the design of an appropriate system synchronizer, please refer to the Crystal Semiconductor Application Notes: "AT&T 62411 Design Considerations – Jitter and Synchroniza- tion" and "Jitter Te st ing Proc edures for Compliance with AT&T 62411". Transmit Side Jitter Attenuation In some applications it is desirable to attenuate jitter from the signal to be transmitted. A CS61575 in local loopback mode can be used as a jitter attenuator. The inputs to the jitter attenuator are TPOS, TNEG, TCLK. The outputs from the jitter attenuator are RPOS, RNEG and RCLK. Line Protection Secondary protection components can be added to provide lightning surge and AC power-cross immunity. Refer to the application note "Secon- dary Line Protection for T1 and E1 Line Cards" for detailed information on the different electrical safety standards and specific application circuit recommendations. Parameter Receiver Transmitter Turns Ratio 1:2 CT ± 5% 1:1 ± 1.5 % for 75 Ω E1 1:1.15 ± 5 % for 100 Ω T1 1:1.26 ± 1.5 % for 120 Ω E1 Primary Inductance 600 µH min. @ 772 kHz 1.5 mH min. @ 772 kHz Primary Leakage Inductance 1.3 µH max. @ 772 kHz 0.3 µH max. @ 772 kHz Secondary Leakage Inductance 0.4 µH max. @ 772 kHz 0.4 µH max. @ 772 kHz Interwinding Capacitance 23 pF max. 18 pF max. ET-constant 16 V- µs min. for T1 12 V- µs min. for E1 16 V- µs min. for T1 12 V- µs min. for E1 Table A2. Transformer Specifications CS61574A CS61575 30 DS154F2 |
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