© Semiconductor Components Industries, LLC, 2000

May, 2000 – Rev. 3

1

Publication Order Number:

MCR08BT1/D

MCR08B, MCR08M

Preferred Device

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

PNPN devices designed for line powered consumer applications

such as relay and lamp drivers, small motor controls, gate drivers for

larger thyristors, and sensing and detection circuits. Supplied in

surface mount package for use in automated manufacturing.

Date Code

Rating

Symbol

Value

Unit

Peak Repetitive Off–State Voltage(1)

(Sine Wave, RGK = 1000 Ω,

TJ = 25 to 110°C)

MCR08BT1

MCR08MT1

VDRM,

VRRM

200

600

Volts

On-State Current RMS

(All Conduction Angles; TC = 80°C)

IT(RMS)

0.8

Amps

Peak Non-repetitive Surge Current

(1/2 Cycle Sine Wave, 60 Hz,

TC = 25°C)

ITSM

8.0

Amps

Circuit Fusing Considerations

(t = 8.3 ms)

I2t

0.4

A2s

Forward Peak Gate Power

(TC = 80°C, t = 1.0 µs)

PGM

0.1

Watts

Average Gate Power

(TC = 80°C, t = 8.3 ms)

PG(AV)

0.01

Watts

Operating Junction Temperature Range

TJ

– 40 to

+110

°C

Storage Temperature Range

Tstg

– 40 to

+150

°C

(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant source such that the voltage

ratings of the devices are exceeded.

SCRs

0.8 AMPERES RMS

200 thru 600 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

Device

Package

Shipping

ORDERING INFORMATION

MCR08BT1

SOT223

16mm Tape and Reel

(1K/Reel)

MCR08MT1

SOT223

http://onsemi.com

16mm Tape and Reel

(1K/Reel)

K

G

A

SOT–223

CASE 318E

STYLE 10

4

1

2

3

PIN ASSIGNMENT

1

2

3

Anode

Gate

Cathode

4

Anode