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TS2012EIJT Datasheet(PDF) 7 Page - STMicroelectronics |
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TS2012EIJT Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 32 page  DocID026152 Rev 1 7/32 TS2012EI Electrical characteristics 32 3 Electrical characteristics 3.1 Electrical characteristics tables Table 6. VCC = +5 V, GND = 0 V, Vic =2.5 V, Tamb = 25° C (unless otherwise specified) Symbol Parameters and test conditions Min. Typ. Max. Unit ICC Supply current No input signal, no load, both channels 57 mA ISTBY Standby current No input signal, VSTBY = GND 12 µA Voo Output offset voltage Floating inputs, G = 6 dB, RL = 8 25 mV Po Output power THD + N = 1% max, f = 1 kHz, RL = 4 THD + N = 1% max, f = 1 kHz, RL = 8 THD + N = 10% max, f = 1 kHz, RL = 4 THD + N = 10% max, f = 1 kHz, RL = 8 1.85 1.15 2.5 1.6 W THD + N Total harmonic distortion + noise Po = 0.8 W, G = 6 dB, f =1 kHz, RL = 8 0.5 % Efficiency Efficiency per channel Po = 1.85 W, RL = 4 +15µH Po = 1.16 W, RL = 8 +15µH 78 88 % PSRR Power supply rejection ratio with inputs grounded Cin =1µF (1),f = 217 Hz, R L = 8 Gain = 6 dB Vripple = 200 mVpp 65 dB Crosstalk Channel separation Po = 0.9 W, G = 6 dB, f =1 kHz, RL = 8 90 dB CMRR Common mode rejection ratio Cin = 1 µF, f = 217 Hz, RL = 8 Gain = 6 dB VICM = 200 mVpp 63 dB Gain Gain value with no load G1 = G0 = VIL G1 = VIL and G0 = VIH G1 = VIH and G0 = VIL G1 = G0 = VIH 5.5 11.5 17.5 23.5 6 12 18 24 6.5 12.5 18.5 24.5 dB Zin Single-ended input impedance Referred to ground Gain = 6 dB Gain = 12 dB Gain = 18 dB Gain = 24 dB 24 24 12 6 30 30 15 7.5 36 36 18 9 k FPWM Pulse width modulator base frequency 190 280 370 kHz |
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