ACE9006M03N datasheet(1/7 Pages) ACE

Part #	ACE9006M03N

Description	N-Channel 60-V MOSFET

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Manufacturer	ACE [ACE Technology Co., LTD.]

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ACE9006M03N

N-Channel 60-V MOSFET

VER 1.1

1

Description

The ACE9006M03N uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications. The source leads are separated to

allow a Kelvin connection to the source, which may be used to bypass the source inductance.

Features



Low rDS(on) trench technology



Low thermal impedance



Fast switching speed

Applications

 White LED boost converters

 Automotive Systems

 Industrial DC/DC Conversion Circuits

Absolute Maximum Ratings

Parameter

Symbol

Limit

Units

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

Continuous

Drain Current

a

TA=25℃

ID

120

A

Pulsed Drain Current

b

IDM

360

A

Continuous Source Current (Diode Conduction)

a

IS

90

A

Power Dissipation

a

TA=25℃

PD

300

W

Operating temperature / storage temperature

TJ/TSTG

-55~175

℃

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Ambient

a

t <= 10 sec

RθJA

62.5

°C/W

Steady State

1

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

PRODUCT SUMMARY

VDS (V)

rDS(on) (mΩ)

ID(A)

60

3 @ VGS = 10V

120A

4 @ VGS = 5.5V

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ACE9006M03N Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

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