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BQ27750DRZT Datasheet(PDF) 10 Page - Texas Instruments

Part # BQ27750DRZT
Description  Impedance Track Battery Gas Gauge and Protection Solution for 1-Series Cell Li-Ion Battery Packs
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

BQ27750DRZT Datasheet(HTML) 10 Page - Texas Instruments

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10
bq27750
SLUSCM7 – JUNE 2017
www.ti.com
Product Folder Links: bq27750
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Copyright © 2017, Texas Instruments Incorporated
Current Protection Thresholds (continued)
Typical values stated where TA = 25ºC, Min/Max values stated where TA = –40ºC to 85ºC (unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
ΔVSCD2
SCD2 detection threshold
voltage program step
VSCD2 = VSRP – VSRN,
PROTECTION_CONTROL[RSNS] = 1
–22.2
mV
VSCD2 = VSRP – VSRN,
PROTECTION_CONTROL[RSNS] = 0
–11.1
6.23 Current Protection Timing
Typical values stated where TA = 25ºC, Min/Max values stated where TA = –40ºC to 85ºC (unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
NOM
MAX
UNIT
tOCD
OCD detection delay
time
1
31
ms
ΔtOCD
OCD detection delay
time program step
2
ms
tSCC
SCC detection delay
time
0
915
µs
ΔtSCC
SCC detection delay
time program step
61
µs
tSCD1
SCD1 detection delay
time
PROTECTION_CONTROL[SCDDx2] = 0
0
915
µs
PROTECTION_CONTROL[SCDDx2] = 1
0
1850
ΔtSCD1
SCD1 detection delay
time program step
PROTECTION_CONTROL[SCDDx2] = 0
61
µs
PROTECTION_CONTROL[SCDDx2] = 1
121
tSCD2
SCD2 detection delay
time
PROTECTION_CONTROL[SCDDx2] = 0
0
458
µs
PROTECTION_CONTROL[SCDDx2] = 1
0
915
ΔtSCD2
SCD2 detection delay
time program step
PROTECTION_CONTROL[SCDDx2] = 0
30.5
µs
PROTECTION_CONTROL[SCDDx2] = 1
61
tDETECT
Current fault detect
time
VSRP – VSRN = VT – 3 mV for OCD, SCD1, and SC2,
VSRP – VSRN = VT + 3 mV for SCC
160
µs
tACC
Current fault delay time
accuracy
Max delay setting
–10%
10%
6.24 N-CH FET Drive (CHG, DSG)
Typical values stated where TA = 25ºC, Min/Max values stated where TA = –40ºC to 85ºC (unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
Output voltage ratio
RatioDSG = (VDSG – VBAT) / VBAT, 2.2 V < VBAT < 4.07 V,
10 MΩ between PACK and DSG
2.133
2.333
2.467
RatioCHG = (VCHG – VBAT) / VBAT, 2.2 V < VBAT < 4.07 V,
10 MΩ between BAT and CHG
2.133
2.333
2.467
V(FETON)
Output voltage,
CHG and DSG on
VDSG(ON) = VDSG – VBAT, 4.07 V ≤ VBAT ≤ 18 V, 10 MΩ
between PACK and DSG
8.75
9.5
10.25
V
VCHG(ON) = VCHG – VBAT, 4.07 V ≤ VBAT ≤ 18 V, 10 MΩ
between BAT and CHG
8.75
9.5
10.25
V(FETOFF)
Output voltage,
CHG and DSG off
VDSG(OFF) = VDSG – VPACK, 10 MΩ between PACK and
DSG
–0.4
0.4
V
VCHG(OFF) = VCHG – VBAT, 10 MΩ between BAT and CHG
–0.4
0.4
tR
Rise time
VDSG from 0% to 35% VDSG(ON)(TYP), VBAT ≥ 2.2 V, CL =
4.7 nF between DSG and PACK, 5.1 kΩ between DSG
and CL, 10 MΩ between PACK and DSG
200
500
µs
VCHG from 0% to 35% VCHG(ON)(TYP), VBAT ≥ 2.2 V, CL =
4.7 nF between CHG and BAT, 5.1 kΩ between CHG and
CL, 10 MΩ between BAT and CHG
200
500


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