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RJH65T14DPQ-A0 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJH65T14DPQ-A0 Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 10 page  RJH65T14DPQ-A0 R07DS1256EJ0100 Rev.1.00 Page 4 of 9 Mar 16, 2015 10 8 6 4 2 0 Gate to Emitter Cutoff Voltage vs. Case Temparature (Typical) −25 0 50 25 100 75 125 150 Case Temparature Tc (°C) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Gate to Emitter Voltage VGE (V) 3.0 2.0 1.0 2.5 1.5 0.5 0 −25 0 25 75 125 50 100 150 Collector to Emitter Saturation Voltage vs. Case Temparature (Typical) Case Temparature Tc (°C) 5 4 3 2 0 4 8 12 20 16 1 5 4 3 2 0 48 12 20 16 1 Tc = 150°C Pulse Test IC = 100 A 50 A 25 A IC = 100 A 50 A 25 A 1.0 mA IC = 10 mA VCE = 10 V Pulse Test 50 A 25 A IC = 100 A VGE = 15 V Pulse Test Tc = 25°C Pulse Test |
Similar Part No. - RJH65T14DPQ-A0_15 |
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Similar Description - RJH65T14DPQ-A0_15 |
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