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SPB80N03 Datasheet(PDF) 5 Page - Siemens Semiconductor Group |
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SPB80N03 Datasheet(HTML) 5 Page - Siemens Semiconductor Group |
5 / 9 page 5 Semiconductor Group SPP80N03 Power Dissipation Ptot = f (TC) 0 20 40 60 80 100 120 140 160 °C 190 TC 0 40 80 120 160 200 240 W 320 SPP80N03 Drain current ID = f (TC) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC 0 10 20 30 40 50 60 70 A 90 SPP80N03 Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPP80N03 single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Safe operating area ID = f (VDS) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 V VDS 1 10 2 10 3 10 A SPP80N03 DC 10 ms 1 ms 100 µs t p = 54.0µs |
Similar Part No. - SPB80N03 |
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Similar Description - SPB80N03 |
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