TPC8206 datasheet(3/7 Pages) TOSHIBA

Part #	TPC8206

Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPC8206

2003-02-18

3

Electrical Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

¾

±10

mA

Drain cut-OFF current

IDSS

VDS = 60 V, VGS = 0 V

¾

10

mA

V (BR) DSS

ID = 10 mA, VGS = 0 V

60

¾

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = -12 V

35

¾

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.3

¾

2.5

V

VGS = 4 V, ID = 2.5 A

¾

55

75

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 2.5 A

¾

40

50

m

W

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 2.5 A

3.5

7.0

¾

S

Input capacitance

Ciss

¾

800

¾

Reverse transfer capacitance

Crss

¾

60

¾

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

¾

190

¾

pF

Rise time

tr

¾

2.6

¾

Turn-ON time

ton

¾

10

¾

Fall time

tf

¾

2.3

¾

Switching time

Turn-OFF time

toff

Duty <= 1%, tw = 10 ms

¾

22

¾

ns

Total gate charge

(gate-source plus gate-drain)

Qg

¾

17

¾

Gate-source charge

Qgs

¾

12

¾

Gate-drain (“miller”) charge

Qgd

VDD ~- 48 V, VGS = 10 V, ID = 5 A

¾

5

¾

nC

Source-Drain Ratings and Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP

¾

20

A

Forward voltage (diode)

VDSF

IDR = 5 A, VGS = 0 V

¾

-1.2

V

VDD ~- 30 V

0 V

VGS

10 V

ID = 2.5 A

VOUT

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