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VN5E025MJ-E Datasheet(PDF) 9 Page - STMicroelectronics

Part # VN5E025MJ-E
Description  Single channel high side driver with analog current sense for automotive applications
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VN5E025MJ-E Datasheet(HTML) 9 Page - STMicroelectronics

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9/35
VN5E025MJ-E
Electrical specifications
33
IL(off1)
Off-state output current
VIN = VOUT = 0V; VCC = 13V;
Tj = 25°C
00.01
3
µA
VIN = VOUT = 0V; VCC = 13V;
Tj = 125°C
05
µA
VF
Output - VCC diode
voltage
-IOUT = 2A; Tj = 150°C
0.7
V
1.
PowerMOS leakage included.
Table 6. Switching characteristics (VCC=13V, Tj=25°C)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
RL = 4.3Ω (see Figure 5)—
15
µs
td(off)
Turn-off delay time
RL = 4.3Ω (see Figure 5)—
40
µs
(dVOUT/dt)on Turn-on voltage slope
RL = 4.3Ω
See
Figure 23
—V
/µs
(dVOUT/dt)off Turn-off voltage slope
RL = 4.3Ω
See
Figure 25
—V
/µs
WON
Switching energy losses
during twon
RL = 4.3Ω (see Figure 5)—
0.4
mJ
WOFF
Switching energy losses
during twoff
RL = 4.3Ω (see Figure 5)—
0.5
mJ
Table 7. Logic inputs
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VIL
Input low level voltage
0.9
V
IIL
Low level input current
VIN = 0.9V
1
µA
VIH
Input high level voltage
2.1
V
IIH
High level input current
VIN = 2.1V
10
µA
VI(hyst)
Input hysteresis voltage
0.25
V
VICL
Input clamp voltage
IIN = 1mA
5.5
7
V
IIN = -1mA
-0.7
V
VCSDL
CS_DIS low level voltage
0.9
V
ICSDL
Low level CS_DIS current
VCSD = 0.9V
1
µA
VCSDH
CS_DIS high level voltage
2.1
V
ICSDH
High level CS_DIS current
VCSD = 2.1V
10
µA
VCSD(hyst) CS_DIS hysteresis voltage
0.25
V
VCSCL
CS_DIS clamp voltage
ICSD = 1mA
5.5
7
V
ICSD = -1mA
-0.7
V
Table 5. Power section (continued)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit


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