RMHE41A364AGBG datasheet(1/52 Pages) RENESAS

Part #	RMHE41A364AGBG

Description	1.1G-BIT Low Latency DRAM-III Common I/O Burst Length of 4

Download	52 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

Logo

1 / 52 page

R10DS0250EJ0100 Rev. 1.00

Page 1 of 51

Jun. 19, 2015

Datasheet

RMHE41A184AGBG

RMHE41A364AGBG

1.1G-BIT Low Latency DRAM-III

Common I/O Burst Length of 4

Description

The RMHE41A184AGBG is a 67,108,864-word by 18-bit and the RMHE41A364AGBG is a 33,554,432-word by 36-bit

synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using DRAM memory cell.

The Low Latency DRAM-III chip is a 1.1Gb DRAM capable of a sustained throughput of approximately 57.6 Gbps for

burst length of 4 (approximately 51.2 Gbps for applications implementing error correction), excluding refresh overhead

and data bus turn-around

With a bus speed of 800 MHz, a burst length of 4, and a tRC of 13.75 ns, the Low Latency DRAM-III chip is capable of

achieving this rate when accesses to at least 6 banks of memory are overlapped.

These products are packaged in 180-pin FCBGA.

Specification

• Density: 1.1Gbit

• Organization: 8M words x 18 bits x 8 banks

4M words x 36 bits x 8 banks

• Operating frequency

800 MHz (MAX.) @ tRC=13.75 ns

• tRC

13.75 ns tRC (and 13.75 ns tRFC)

• Burst length: 4

• Address bus

2 cycle DDR address

• Package

180-pin FCBGA (Ball Array: 1 mm x 1 mm Pitch)

Package size: 18.5 mm x 14 mm

ROHS 6/6 compliance

• Power supply

- 2.5 V VEXT

- 1.5 V VDD

- 1.0 V or 1.2 V VDDQ

• Refresh command

- Auto Refresh : 16384 cycles / 2 ms for each bank

- Overlapped Refresh with REF# pin

• Operating case temperature: 0 to 95 °C

R10DS0250EJ0100

Rev. 1.00

Jun. 19, 2015

Similar Part No. - RMHE41A364AGBG

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	RMHE	393Kb / 5P	Rotative Transducer Elements in Hall Effect Technology 01-Jan-2022
	RMHE1A1WAXXXXBO10E1	393Kb / 5P	Rotative Transducer Elements in Hall Effect Technology 01-Jan-2022
	RMHE1A1WBXXXXBO10E1	393Kb / 5P	Rotative Transducer Elements in Hall Effect Technology 01-Jan-2022
	RMHE1A1WCXXXXBO10E1	393Kb / 5P	Rotative Transducer Elements in Hall Effect Technology 01-Jan-2022
	RMHE1A1WDXXXXBO10E1	393Kb / 5P	Rotative Transducer Elements in Hall Effect Technology 01-Jan-2022

More results

Similar Description - RMHE41A364AGBG

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	UPD48011418	1Mb / 51P	1.1G-BIT Lo w Latency DRAM-III Common I/O Burst Length of 4 Feb 01, 2013
	UPD48011318	1Mb / 51P	1.1G-BIT L ow Latency DRAM-III Common I/O Burst Length of 2 Feb 01, 2013
	UPD48288209-A	862Kb / 50P	288M-BIT Low Latency DRAM Common I/O Feb 01, 2013
	UPD48576209	1Mb / 53P	576M-BIT Low Latency DRAM Common I/O Oct 01, 2012
	UPD48288118-A	843Kb / 48P	288M-BIT Low Latency DRAM Separate I/O Feb 01, 2013
	UPD48576109	1Mb / 52P	576M-BIT Low Latency DRAM Separate I/O Oct 01, 2012
	UPD48288209A	1Mb / 53P	288M-BIT Low Laten cy DRAM Common I/O Oct 01, 2012
	UPD48576118F1	1Mb / 52P	576M-BIT Low Latency DRAM
	UPD48576209F1	1Mb / 54P	576M-BIT Low Latency DRAM
	UPD48288209AF1	1Mb / 54P	288M-BIT Low Latency DRAM

More results

RMHE41A364AGBG Datasheet(PDF) 1 Page - Renesas Technology Corp

RMHE41A364AGBG Datasheet(HTML) 1 Page - Renesas Technology Corp

Similar Part No. - RMHE41A364AGBG

Similar Description - RMHE41A364AGBG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52

Datasheet Download

Link URL