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74LVC1G58GW Datasheet(PDF) 10 Page - NXP Semiconductors |
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74LVC1G58GW Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 18 page 9397 750 13852 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 15 September 2004 10 of 18 Philips Semiconductors 74LVC1G58 Low-power configurable multiple function gate 14. Transfer characteristics Measurement points are given in Table 12. Definitions for test circuit: RT = Termination resistance should be equal to output impedance Zo of the pulse generator. CL = Load capacitance including jig and probe capacitance. RL = Load resistor. VEXT = Test voltage for switching times. Fig 12. Load circuitry for switching times. Table 12: Measurement points Supply voltage Input Load VEXT VCC VI tr =tf CL RL tPLH, tPHL tPZH, tPHZ tPZL, tPLZ 1.65 V to 1.95 V VCC ≤ 2.0 ns 30 pF 1 k Ω open GND 2 × VCC 2.3 to 2.7 V VCC ≤ 2.0 ns 30 pF 500 Ω open GND 2 × VCC 2.7 V 2.7 V ≤ 2.5 ns 50 pF 500 Ω open GND 6 V 3.0 V to 3.6 V 2.7 V ≤ 2.5 ns 50 pF 500 Ω open GND 6 V 4.5 V to 5.5 V VCC ≤ 2.5 ns 50 pF 500 Ω open GND 2 × VCC VEXT VCC VI VO mna616 D.U.T. CL RT RL RL PULSE GENERATOR Table 13: Transfer characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit Tamb = −40 °C to +85 °C [1] VT+ positive-going threshold voltage see Figure 13, 14, 15 and 16 VCC = 1.8 V 0.70 1.02 1.20 V VCC = 2.3 V 1.11 1.42 1.60 V VCC = 3.0 V 1.50 1.79 2.00 V VCC = 4.5 V 2.16 2.52 2.74 V VCC = 5.5 V 2.61 2.99 3.33 V VT− negative-going threshold voltage see Figure 13, 14, 15 and 16 VCC = 1.8 V 0.30 0.53 0.72 V VCC = 2.3 V 0.58 0.77 1.00 V VCC = 3.0 V 0.80 1.04 1.30 V VCC = 4.5 V 1.21 1.55 1.90 V VCC = 5.5 V 1.45 1.86 2.29 V |
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