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SI7411DN-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7411DN-T1-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si7411DN Vishay Siliconix www.vishay.com 2 Document Number: 72399 S-40763—Rev. C, 19-Apr-04 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −300 mA −0.4 −1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V −1 mA Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V, TJ = 85_C −5 mA On-State Drain Currenta ID(on) VDS v −5 V, VGS = −4.5 V −30 A VGS = −4.5 V, ID = −11.4 A 0.015 0.019 Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −9.9 A 0.020 0.025 W DS(on) VGS = −1.8 V, ID = −2.9 A 0.027 0.034 Forward Transconductancea gfs VDS = −15 V, ID = −11.4 A 35 S Diode Forward Voltagea VSD IS = −3.0 A, VGS = 0 V −0.8 −1.2 V Dynamicb Total Gate Charge Qg 27 41 Gate-Source Charge Qgs VDS = −10 V, VGS = −4.5 V, ID = −11.4 A 3.9 nC Gate-Drain Charge Qgd 7 Gate Resistance Rg f = 1 MHz 5 W Turn-On Delay Time td(on) 23 35 Rise Time tr VDD = −10 V, RL = 10 W 45 70 Turn-Off Delay Time td(off) VDD = 10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W 135 200 ns Fall Time tf 70 105 Source-Drain Reverse Recovery Time trr IF = −3.2 A, di/dt = 100 A/ms 29 50 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 0 1234 5 VGS = 5 thru 2 V 25_C TC = 125_C 1 V −55_C 1.5 V Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) |
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