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BF587 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BF587 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page  1996 Dec 09 2 Philips Semiconductors Product specification NPN high-voltage transistors BF583; BF585; BF587 FEATURES • Low feedback capacitance. APPLICATIONS • For use in video output stages of black and white and colour television receivers. DESCRIPTION NPN transistors in a TO-202 plastic package. PINNING PIN DESCRIPTION 1 emitter 2 collector 3 base Fig.1 Simplified outline (TO-202) and symbol. handbook, halfpage 12 3 MBH793 2 3 1 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF583 − 300 V BF585 − 350 V BF587 − 400 V VCEO collector-emitter voltage open base BF583 − 250 V BF585 − 300 V BF587 − 350 V ICM peak collector current − 100 mA Ptot total power dissipation in free air; Tamb ≤ 25 °C − 1.6 W hFE DC current gain IC = 25 mA; VCE =20V − 50 Cre feedback capacitance IC =ic = 0; VCE = 30 V; f = 1 MHz − 1.8 pF fT transition frequency IC = 10 mA; VCE = 10 V 70 110 MHz |
Similar Part No. - BF587 |
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Similar Description - BF587 |
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