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ES2G-M3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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ES2G-M3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page ES2F-M3, ES2G-M3 www.vishay.com Vishay General Semiconductor Revision: 19-Feb-15 1 Document Number: 89484 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated pellet chip junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, and telecommunication. MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 300 V, 400 V IFSM 50 A trr 35 ns VF 1.1 V TJ max. 150 °C Package DO-214AA (SMB) Diode variations Single die DO-214AA (SMB) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL ES2F ES2G UNIT Device marking code EF EG Maximum repetitive peak reverse voltage VRRM 300 400 V Working peak reverse voltage VRWM 225 300 V Maximum RMS voltage VRMS 210 280 V Maximum average forward rectified current at TL = 110 °C IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A Operating junction and storage temperature range TJ, TSTG -55 to +150 °C |
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