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BD830 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BD830
Description  isc Silicon PNP Power Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD830 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
BD830
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·
High DC Current Gain
·
Low Saturation Voltage
·
Complement to Type BD829
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for driver-stages in hi-fi amplifiers and
television circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.0
A
ICP
Collector Current-Peak
-1.5
A
PC
Collector Power Dissipation
@ Ta=25℃
2
W
Collector Power Dissipation
@ TC=25℃
10
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
12.5
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
62.5
℃
/W


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