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BD830 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD830 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor BD830 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) · High DC Current Gain · Low Saturation Voltage · Complement to Type BD829 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for driver-stages in hi-fi amplifiers and television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.0 A ICP Collector Current-Peak -1.5 A PC Collector Power Dissipation @ Ta=25℃ 2 W Collector Power Dissipation @ TC=25℃ 10 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 12.5 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃ /W |
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