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IRLMS4502 Datasheet(PDF) 2 Page - International Rectifier |
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IRLMS4502 Datasheet(HTML) 2 Page - International Rectifier |
2 / 7 page IRLMS4502 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.003 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.042 VGS = -4.5V, ID = -5.5A ––– ––– 0.075 VGS = -2.5V, ID = -4.7A VGS(th) Gate Threshold Voltage -0.60 ––– ––– V VDS = VGS, ID = -250µA gfs Forward Transconductance 8.8 ––– ––– S VDS = -10V, ID = -5.5A ––– ––– -1.0 VDS = -12V, VGS = 0V ––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 22 33 ID = -5.5A Qgs Gate-to-Source Charge ––– 3.9 5.8 nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 11 16 VGS = -5.0V td(on) Turn-On Delay Time ––– 18 ––– VDD = -6.0V tr Rise Time ––– 460 ––– ID = -1.0A td(off) Turn-Off Delay Time ––– 130 ––– RG = 4.5Ω tf Fall Time ––– 250 ––– RD = 6.0Ω Ciss Input Capacitance ––– 1820 ––– VGS = 0V Coss Output Capacitance ––– 1110 ––– pF VDS = -10V Crss Reverse Transfer Capacitance ––– 1070 ––– ƒ = 1.0kHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.7A, VGS = 0V trr Reverse Recovery Time ––– 31 46 ns TJ = 25°C, IF = -5.5A Qrr Reverse Recovery Charge ––– 21 32 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics A -44 -1.7 S D G Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: Pulse width ≤ 400µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 5sec. Starting T J = 25°C, L = 1.8mH RG = 25Ω, IAS = -5.5A. (See Figure 12) |
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