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GS8662QT10BD-333 Datasheet(PDF) 7 Page - GSI Technology |
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GS8662QT10BD-333 Datasheet(HTML) 7 Page - GSI Technology |
7 / 29 page GS8662QT07/10/19/37BD-357/333/300/250/200 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Rev: 1.00a 11/2011 7/28 © 2011, GSI Technology Background Separate I/O SRAMs, from a system architecture point of view, are attractive in applications where alternating reads and writes are needed. Therefore, the SigmaQuad-II+ SRAM interface and truth table are optimized for alternating reads and writes. Separate I/O SRAMs are unpopular in applications where multiple reads or multiple writes are needed because burst read or write transfers from Separate I/O SRAMs can cut the RAM’s bandwidth in half. SigmaQuad-II B2 SRAM DDR Read The read port samples the status of the Address Input and R pins at each rising edge of K. A low on the Read Enable-bar pin, R, begins a read cycle. Clocking in a high on the Read Enable-bar pin, R, begins a read port deselect cycle. SigmaQuad-II B2 SRAM DDR Write The write port samples the status of the W pin at each rising edge of K and the Address Input pins on the following rising edge of K. A low on the Write Enable-bar pin, W, begins a write cycle. The first of the data-in pairs associated with the write command is clocked in with the same rising edge of K used to capture the write command. The second of the two data in transfers is captured on the rising edge of K along with the write address. Clocking in a high on W causes a write port deselect cycle. Special Functions Byte Write and Nybble Write Control Byte Write Enable pins are sampled at the same time that Data In is sampled. A High on the Byte Write Enable pin associated with a particular byte (e.g., BW0 controls D0–D8 inputs) will inhibit the storage of that particular byte, leaving whatever data may be stored at the current address at that byte location undisturbed. Any or all of the Byte Write Enable pins may be driven High or Low during the data in sample times in a write sequence. Each write enable command and write address loaded into the RAM provides the base address for a 2beat data transfer. The x18 version of the RAM, for example, may write 36 bits in association with each address loaded. Any 9-bit byte may be masked in any write sequence. Nybble Write (4-bit) control is implemented on the 8-bit-wide version of the device. For the x8 version of the device, “Nybble Write Enable” and “NWx” may be substituted in all the discussion above. Example x18 RAM Write Sequence using Byte Write Enables Data In Sample Time BW0 BW1 D0–D8 D9–D17 Beat 1 0 1 Data In Don’t Care Beat 2 1 0 Don’t Care Data In Resulting Write Operation Byte 1 D0–D8 Byte 2 D9–D17 Byte 3 D0–D8 Byte 4 D9–D17 Written Unchanged Unchanged Written Beat 1 Beat 2 |
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