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FM840 Datasheet(PDF) 2 Page - First Components International

Part # FM840
Description  8Amps 500 Voltage N Channel MOSFET
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Manufacturer  FCI [First Components International]
Direct Link  http://www.cotra.com.tw/
Logo FCI - First Components International

FM840 Datasheet(HTML) 2 Page - First Components International

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ORDERING INFORMATION
Part Number
Package
F
M840.................................................TO-220
....................F
MF840
ITO-220 Full Package
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25
.
C FM840 / FMF840
Characteristic
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250
A)
V(BR)DSS
500
V
Drain-Source Leakage Current
(VDS = 500 V, VGS = 0 V)
(VDS = 400 V, VGS = 0 V, TJ = 125
)
IDSS
0.25
1.0
mA
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
IGSSR
100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 250
A)
VGS(th)
2.0
4.0
V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 4.0A) *
RDS(on)
0.8
Drain-Source On-Voltage (VGS = 10 V)
(ID = 8.0 A)
VDS(on)
5.0
7.2
V
Forward Transconductance (VDS = 50 V, ID = 4.0A) *
gFS
4.9
mmhos
Input Capacitance
Ciss
1450
1680
pF
Output Capacitance
Coss
190
246
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Crss
45.4
144
pF
Turn-On Delay Time
td(on)
15
50
ns
Rise Time
tr
33
72
ns
Turn-Off Delay Time
td(off)
40
150
ns
Fall Time
(RGo + C17n = 9.1 ) *
tf
32
60
ns
Total Gate Charge
Qg
40
64
nC
Gate-Source Charge
Qgs
8.0
nC
Gate-Drain Charge
(VDS = 400 V, ID = 8.0 A,
VGS = 10 V)*
Qgd
17
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD
4.5
nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS
7.5
nH
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
VSD
1.5
V
Forward Turn-On Time
ton
**
ns
Reverse Recovery Time
(IS = 8.0 A, VGS = 0 V,
dIS/dt = 100A/µs)
trr
320
ns
* Pulse Test: Pulse Width
300µs, Duty Cycle
2%
** Negligible, Dominated by circuit inductance
FM840 / FMF840 8Amps 500 Voltage N Channel MOSFET


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