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FM840 Datasheet(PDF) 2 Page - First Components International |
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FM840 Datasheet(HTML) 2 Page - First Components International |
2 / 5 page ORDERING INFORMATION Part Number Package F M840.................................................TO-220 ....................F MF840 ITO-220 Full Package ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . C FM840 / FMF840 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) V(BR)DSS 500 V Drain-Source Leakage Current (VDS = 500 V, VGS = 0 V) (VDS = 400 V, VGS = 0 V, TJ = 125 ) IDSS 0.25 1.0 mA Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 A) VGS(th) 2.0 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 4.0A) * RDS(on) 0.8 Drain-Source On-Voltage (VGS = 10 V) (ID = 8.0 A) VDS(on) 5.0 7.2 V Forward Transconductance (VDS = 50 V, ID = 4.0A) * gFS 4.9 mmhos Input Capacitance Ciss 1450 1680 pF Output Capacitance Coss 190 246 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 45.4 144 pF Turn-On Delay Time td(on) 15 50 ns Rise Time tr 33 72 ns Turn-Off Delay Time td(off) 40 150 ns Fall Time (RGo + C17n = 9.1 ) * tf 32 60 ns Total Gate Charge Qg 40 64 nC Gate-Source Charge Qgs 8.0 nC Gate-Drain Charge (VDS = 400 V, ID = 8.0 A, VGS = 10 V)* Qgd 17 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) VSD 1.5 V Forward Turn-On Time ton ** ns Reverse Recovery Time (IS = 8.0 A, VGS = 0 V, dIS/dt = 100A/µs) trr 320 ns * Pulse Test: Pulse Width 300µs, Duty Cycle 2% ** Negligible, Dominated by circuit inductance FM840 / FMF840 8Amps 500 Voltage N Channel MOSFET |
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