BRB7N80 datasheet(2/6 Pages) FOSHAN

Part #	BRB7N80

Description	N-CHANNEL MOSFET in a TO-263 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

BRB7N80

Rev.D May.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Drain-Source Voltage

VDSS

800

V

Drain Current

ID(Tc=25℃)

7.0

A

Drain Current

ID(Tc=100℃)

4.2

A

Drain Current - Pulsed

IDM

26.4

A

Gate-Source Voltage

VGS

±30

V

Single Pulsed Avalanche Energy

EAS

580

mJ

Repetitive Avalanche Energy

EAR

16.7

mJ

Avalanche Current

IAR

6.6

A

Power Dissipation

PD(Tc=25℃)

56

W

Operating and Storage Temperature Range

TJ,TSTG

-55 to 150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Drain-Source Breakdown Voltage

BVDSS

VGS=0V

ID=250μA

800

V

Zero Gate Voltage Drain Current

IDSS

VDS=800V

VGS=0V

10

μA

VDS=640V

TC=125℃

100

μA

Gate-Body Leakage Current

Forward

IGSS

VGS=±30V

VDS=0V

±0.1

μA

Gate Threshold Voltage

VGS(th)

VDS=VGS

ID=250μA

3.0

5.0

V

Static Drain-Source

On-Resistance

RDS(on)

VGS=10V

ID=3.5A

1.57

1.9

Ω

Forward Transconductance

gFS

VDS=50V

ID=3.5A

5.5

S

Drain-Source Diode Forward

Voltage

VSD

VGS=0V

IS=7.0A

1.4

V

Input Capacitance

Ciss

VDS=25V

VGS=0V

f=1.0MHz

1290

1680

pF

Output Capacitance

Coss

120

155

pF

Reverse Transfer Capacitance

Crss

10

13

pF

Turn-On Delay Time

td(on)

VDD=400V

ID=7.0A

RG=25Ω

35

80

ns

Turn-On Rise Time

tr

100

200

ns

Turn-Off Delay Time

td(off)

50

110

ns

Turn-Off Fall Time

tf

60

130

ns

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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