2SA1242 datasheet(2/6 Pages) FOSHAN

Part #	2SA1242

Description	Silicon PNP transistor in a TO-252 Plastic Package.

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

2SA1242

Rev.E May.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-35

V

Collector to Emitter Voltage

VCEO

-20

V

Emitter to Base Voltage

VEBO

-8.0

V

Collector Current - Continuous

IC

-5.0

A

Base Current - Continuous

IB

-0.5

A

Peak Collector Current - Continuous

ICM

-8.0

A

Collector Power Dissipation

PC

1.0

W

Collector Power Dissipation

PC(Tc=25℃)

10

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage

VCEO

IC=-10mA

IB=0

-20

V

Emitter to Base Breakdown Voltage

VEBO

IE=-1.0mA

IC=0

-8.0

V

Collector Cut-Off Current

ICBO

VCB=-35V

IE=0

-0.1

μA

Emitter Cut-Off Current

IEBO

VEB=-8.0V

IC=0

-0.1

μA

DC Current Gain

hFE(1)

VCE=-2.0V

IC=-0.5A

100

320

hFE(2)

VCE=-2.0V

IC=-4.0A

70

Collector to Emitter Saturation

Voltage

VCE(sat) IC=-4.0A

IB=-0.1A

-1.0

V

Base to Emitter Voltage

VBE

VCE=-2.0V

IC=-4.0A

-1.5

V

Transition Frequency

fT

VCE=-2.0V

IC=-0.5A

170

MHz

Collector output capacitance

Cob

VCB=-10V

IE=0

f=1.0MHz

62

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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