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K9K1208U0A-YCB0 Datasheet(PDF) 6 Page - Samsung semiconductor |
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K9K1208U0A-YCB0 Datasheet(HTML) 6 Page - Samsung semiconductor |
6 / 27 page K9K1208U0A-YCB0, K9K1208U0A-YIB0 FLASH MEMORY 6 DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.) Parameter Symbol Test Conditions Min Typ Max Unit Operating Current Sequential Read ICC1 tRC=60ns, CE=VIL, IOUT=0mA - 10 20 mA Program ICC2 - - 15 25 Erase ICC3 - - 15 25 Stand-by Current(TTL) ISB1 CE=VIH, WP=0V/VCC - - 1 Stand-by Current(CMOS) ISB2 CE=VCC-0.2, WP=0V/VCC - 10 50 µA Input Leakage Current ILI VIN=0 to 3.6V - - ±10 Output Leakage Current ILO VOUT=0 to 3.6V - - ±10 Input High Voltage VIH - 2.0 - VCC+0.3 V Input Low Voltage, All inputs VIL - -0.3 - 0.8 Output High Voltage Level VOH IOH=-400 µA 2.4 - - Output Low Voltage Level VOL IOL=2.1mA - - 0.4 Output Low Current(R/B) IOL(R/B) VOL=0.4V 8 10 - mA RECOMMENDED OPERATING CONDITIONS (Voltage reference to GND, K9K1208U0A-YCB0 :TA=0 to 70 °C, K9K1208U0A-YIB0:TA=-40 to 85°C) Parameter Symbol Min Typ. Max Unit Supply Voltage VCC 2.7 3.3 3.6 V Supply Voltage VSS 0 0 0 V ABSOLUTE MAXIMUM RATINGS NOTE : 1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns. 2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Parameter Symbol Rating Unit Voltage on any pin relative to VSS VIN -0.6 to + 4.6 V VCC -0.6 to + 4.6 Temperature Under Bias K9K1208U0A-YCB0 TBIAS -10 to +125 °C K9K1208U0A-YIB0 -40 to +125 Storage Temperature TSTG -65 to +150 °C |
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Similar Description - K9K1208U0A-YCB0 |
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