K9K1208U0A-YCB0, K9K1208U0A-YIB0

FLASH MEMORY

6

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Operating

Current

Sequential Read

-

10

20

mA

Program

-

-

15

25

Erase

-

-

15

25

Stand-by Current(TTL)

-

-

1

Stand-by Current(CMOS)

-

10

50

µA

Input Leakage Current

-

-

±10

Output Leakage Current

-

-

±10

Input High Voltage

-

2.0

-

V

Input Low Voltage, All inputs

-

-0.3

-

0.8

Output High Voltage Level

µA

2.4

-

-

Output Low Voltage Level

-

-

0.4

Output Low Current(R/B)

8

10

-

mA

RECOMMENDED OPERATING CONDITIONS

(Voltage reference to GND, K9K1208U0A-YCB0

Parameter

Symbol

Min

Typ.

Max

Unit

Supply Voltage

2.7

3.3

3.6

V

Supply Voltage

0

0

0

V

ABSOLUTE MAXIMUM RATINGS

NOTE :

1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.

2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions

as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter

Symbol

Rating

Unit

-0.6 to + 4.6

V

-0.6 to + 4.6

Temperature Under Bias

K9K1208U0A-YCB0

-10 to +125

°C

K9K1208U0A-YIB0

-40 to +125

Storage Temperature

-65 to +150

°C