2SC1815 datasheet(2/6 Pages) FOSHAN

Part #	2SC1815

Description	Silicon NPN transistor in a TO-92 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

2SC1815

Rev.E Nov.-2015

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current - Continuous

IC

150

mA

Base Current - Continuous

IB

50

mA

Collector Power Dissipation

PC

400

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=100μA

IE=0

60

V

Collector to Emitter Breakdown

Voltage

VCEO

IC=500μA

IB=0

50

V

Emitter to Base Breakdown

Voltage

VEBO

IE=100μA

IC=0

5.0

V

Collector Cut-Off Current

ICBO

VCB=60V

IE=0

0.1

μA

Emitter Cut-Off Current

IEBO

VEB=5.0V

IC=0

0.1

μA

DC Current Gain

hFE(1)

VCE=6.0V

IC=2.0mA

70

700

hFE(2)

VCE=6.0V

IC=150mA

25

100

Collector to Emitter Saturation

Voltage

VCE(sat)

IC=100mA

IB=10mA

0.1

0.25

V

Base to Emitter Saturation

Voltage

VBE(sat)

IC=100mA

IB=10mA

1.0

V

Transition Frequency

fT

VCE=10V

IC=1.0mA

80

MHz

Collector Output Capacitance

Cob

VCB=10V

IE=0

f=1.0MHz

2.0

3.5

pF

Noise Figure

NF

VCE=6.0V

IC=0.1mA

Rg=10KΩ

f=1.0KHz

1.0

10

dB

Base Intrinsic Resistance

rbb

′

VCB=10V

IC=1.0mA

f=30MHz

50

Ω

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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2SC1815 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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