2SC2120 datasheet(2/6 Pages) FOSHAN

Part #	2SC2120

Description	Silicon NPN transistor in a TO-92 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

2SC2120

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

35

V

Collector to Emitter Voltage

VCEO

30

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current - Continuous

IC

800

mA

Emitter Current - Continuous

IE

-800

mA

Collector Power Dissipation

PC

600

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=10mA

IE=0

30

V

Collector Cut-Off Current

ICBO

VCB=35V

IE=0

0.1

μA

Emitter Cut-Off Current

IEBO

VEB=5.0V

IC=0

0.1

μA

DC Current Gain

hFE(1)

VCE=1.0V

IC=100mA

100

320

hFE(2)

VCE=1.0V

IC=700mA

35

Collector to Emitter Saturation

Voltage

VCE(sat)

IC=500mA

IB=20mA

0.5

V

Base to Emitter Voltage

VBE

VCE=1.0V

IC=10mA

0.5

0.8

V

Transition Frequency

fT

VCE=5.0V

IC=10mA

120

MHz

Collector Output Capacitance

Cob

VCB=10V

IE=0

f=1MHz

13

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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2SC2120 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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