MMBTA92T datasheet(2/6 Pages) FOSHAN

Part #	MMBTA92T

Description	Silicon PNP transistor in a SOT-89 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

MMBTA92T

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-300

V

Collector to Emitter Voltage

VCEO

-300

V

Emitter to Base Voltage

VEBO

-5.0

V

Collector Current - Continuous

IC

-500

mA

Collector Power Dissipation

PC

500

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=-100μA

IE=0

-300

V

Collector to Emitter Breakdown

Voltage

VCEO

IC=-1.0mA

IB=0

-300

V

Emitter to Base Breakdown Voltage

VEBO

IE=-100μA

IC=0

-5.0

V

Collector Cut-Off Current

ICBO

VCB=-200V

IE=0

-0.25

μA

Emitter Base Cut-Off Current

IEBO

VBE=-3.0V

IC=0

-0.1

μA

DC Current Gain

hFE(1)

VCE=-10V

IC=-10mA

40

hFE(2)

VCE=-10V

IC=-30mA

25

hFE(3)

VCE=-10V

IC=-1.0mA

25

Collector to Emitter Saturation

Voltage

VCE(sat) IC=-20mA

IB=-2.0mA

-0.5

V

Emitter to Base Saturation Voltage

VBE(sat) IC=-20mA

IB=-2.0mA

-0.9

V

Transition Frequency

fT

VCE=-20V

IC=-10mA

f=100MHz

50

MHz

Collector-Base Capacitance

Ccb

VCB=-20V

IE=0

f=1.0MHz

6.0

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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MMBTA92T Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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