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2SA1145 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

Part # 2SA1145
Description  Silicon PNP transistor in a TO-92LM Plastic Package
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Manufacturer  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Direct Link  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

2SA1145 Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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2SA1145
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
-150
V
Collector to Emitter Voltage
VCEO
-150
V
Emitter to Base Voltage
VEBO
-5.0
V
Collector Current - Continuous
IC
-50
mA
Base Current
IB
-5.0
mA
Collector Power Dissipation
PC
800
mW
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55～150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Emitter Breakdown
Voltage
VCEO
IC=-1.0mA
IB=0
-150
V
Collector Cut-Off Current
ICBO
VCB=-150V
IE=0
-0.1
μA
Emitter Cut-Off Current
IEBO
VEB=-5.0V
IC=0
-0.1
μA
DC Current Gain
hFE
VCE=-5.0V
IC=-10mA
80
240
Collector to Emitter Saturation
Voltage
VCE(sat) IC=-10mA
IB=-1.0mA
-1.0
V
Base to Emitter Voltage
VBE
VCE=-5.0V
IC=-10mA
-0.8
V
Transition Frequency
fT
IC=-10mA
VCE=-5.0V
200
MHz
Collector output capacitance
Cob
VCB=-10V
IE=0
f=1.0MHz
2.5
pF
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)


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