MPSA56 datasheet(2/6 Pages) FOSHAN

Part #	MPSA56

Description	Silicon PNP transistor in a TO-92 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

MPSA56

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-80

V

Collector to Emitter Voltage

VCEO

-80

V

Emitter to Base Voltage

VEBO

-5.0

V

Collector Current - Continuous

IC

-500

mA

Peak Collector Current

ICM

-1.0

A

Peak Base Current

IBM

-200

mA

Collector Power Dissipation

PC

625

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector Cut-Off Current

ICBO

VCB=-80V

IE=0

-0.05

μA

Emitter Cut-Off Current

IEBO

VEB=-5.0V

IC=0

-0.05

μA

DC Current Gain

hFE(1)

VCE=-1.0V

IC=-100mA

100

hFE(2)

VCE=-1.0V

IC=-10mA

100

Collector to Emitter Saturation

Voltage

VCE(sat) IC=-100mA

IB=-10mA

-0.25

V

Base to Emitter Voltage

VBE

VCE=-1.0V

IC=-100mA

-1.2

V

Transition Frequency

fT

VCE=-1.0V

IC=-100mA

f=100MHz

50

MHz

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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MPSA56 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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