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EMN11FH Datasheet(PDF) 1 Page - Rohm |
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EMN11FH Datasheet(HTML) 1 Page - Rohm |
1 / 8 page EMN11FH Switching Diode (High speed switching) (AEC-Q101 qualified) Data sheet ●Outline VRM 80 V IFM 300 mA Io 100 mA IFSM 4000 mA ●Features ●Inner Circuit High reliability Small mold type High speed switching ●Application ●Packaging Specifications High speed switching Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 ●Structure Basic Ordering Unit(pcs) 8000 Epitaxial planar Taping Code T2R Marking N11 ●Absolute Maximum Ratings (Ta = 25ºC) Parameter Symbol Conditions Limits Unit Reverse voltage VR - 80 V Repetitive peak reverse voltage VRM - 80 V Average rectified forward current Io - 100 mA Forward current IFM - 300 mA Peak forward surge current IFSM t=1μs 4000 mA Power dissipation * PD - 150 mW Junction temperature Tj - 150 ℃ Storage temperature Tstg - -55 ~ 150 ℃ * 4 elements total ●Characteristics (Ta = 25ºC) Value per element Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage VF IF=100mA - - 1.2 V Reverse current IR VR=70V - - 0.1 μA Capacitance between terminals Ct VR=6.0V f=1.0MHz - - 3.5 pF Reverse recovery time trr VR=6.0V IF=5.0mA RL=50Ω - - 4.0 ns ※Caution:static electricity www.rohm.com © 2016 ROHMCo., Ltd. All rights reserved. 1/4 2016/03/17_Rev.001 |
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