BUL742 datasheet(2/6 Pages) FOSHAN

Part #	BUL742

Description	Silicon NPN transistor in a TO-220 Plastic Package.

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

BUL742

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

900

V

Collector to Emitter Voltage

VCEO

400

V

Emitter to Base Voltage

VEBO

12

V

Collector Current - Continuous

IC

4

A

Base Current - Continuous

IB

2

A

Collector Power Dissipation

PC

2

W

Collector Power Dissipation

PC(Tc=25 )

℃

70

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=1mA

IE=0

900

V

Collector to Emitter Breakdown

Voltage

VCEO

IC=10mA

IB=0

400

V

Emitter to Base Breakdown Voltage

VEBO

IE=1mA

IC=0

12

V

Emitter Base Cut-Off Current

ICBO

VCB=900V

IE=0

0.1

mA

Collector Cut-Off Current

ICEO

VCE=400V

IB=0

0.1

mA

Collector cut-off current

IEBO

VEB=12V

IC=0

0.1

mA

DC Current Gain

hFE(1)

VCE=5.0V

IC=0.25A

35

70

hFE(2)

VCE=5.0V

IC=2.0A

10

35

Collector to Emitter Saturation

Voltage

VCE(sat)(1) IC=1.0A

IB=0.2A

0.5

V

VCE(sat)(2) IC=2.0A

IB=0.4A

1.0

V

VCE(sat)(3) IC=4.0A

IB=0.8A

1.5

V

Base to Emitter Saturation Voltage

VBE(sat)

IC=2.0A

IB=0.4A

1.5

V

Fall time

tf

VCE=5V

IC=0.5A

(UI9600)

0.8

μs

Storage time

ts

2

6

μs

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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BUL742 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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