CNY651 Series

www.vishay.com

Vishay Semiconductors

Rev. 1.0, 12-Feb-14

2

Document Number: 82566

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

Fig. 1 - Total Power Dissipation vs. Ambient Temperature

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

5V

Forward current

75

mA

Forward surge current

≤ 10 μs

1.5

A

Power dissipation

120

mW

Junction temperature

125

°C

OUTPUT

Collector emitter voltage

32

V

Emitter collector voltage

7V

Collector current

50

mA

Collector peak current

≤ 10 ms

100

mA

Power dissipation

130

mW

Junction temperature

125

°C

COUPLER

DC isolation test voltage CNY651A...ST

t = 1 s

13.9

kV

Total power dissipation

250

mW

Ambient temperature range

-40 to +110

°C

Storage temperature range

-40 to +110

°C

Soldering temperature

2 mm from case,

≤ 10 s

260

°C

0

50

100

150

200

250

300

0

40

80

120

T

Coupled device

Phototransistor

IR-diode