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2SD1468S Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Part # 2SD1468S
Description  TO-92S Plastic-Encapsulate Transistors
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Manufacturer  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Direct Link  http://www.cj-elec.com/en/
Logo JIANGSU - Jiangsu Changjiang Electronics Technology Co., Ltd

2SD1468S Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
2SD1468S
TRANSISTOR (NPN)
FEATURES
Low
Saturation Voltage
Ideal for
Voltage, High Current Drives,
High DC
Current Gain and High Current
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1
A
PC
Collector Power Dissipation
300
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=50μA, IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
15
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=20V, IE=0
0.5
μA
Emitter cut-off current
IEBO
VEB=4V, IC=0
0.5
μA
DC current gain
hFE
VCE=3V, IC=100mA
120
560
Collector-emitter saturation voltage
VCE(sat)
IC=500mA, IB=50mA
B
0.4
V
Transition frequency
fT
VCE=5V, IC=50mA, f=100MHz
50
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
30
pF
CLASSIFICATION OF
hFE
Rank
Q
R
S
Range
120-270
180-390
270-560
JC T
www.cj-elec.com
1
A,Jun,2014
www.cj-elec.com
D,Jul,2016
1
3
2


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