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GS8673ED18BGK-725S Datasheet(PDF) 6 Page - GSI Technology

Part # GS8673ED18BGK-725S
Description  72Mb SigmaQuad-IIIe Burst of 4 ECCRAM
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Manufacturer  GSI [GSI Technology]
Direct Link  http://www.gsitechnology.com
Logo GSI - GSI Technology

GS8673ED18BGK-725S Datasheet(HTML) 6 Page - GSI Technology

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GS8673ED18/36BK-725S/625S/550S
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 6/2015
6/25
© 2012, GSI Technology
Power-Up and Reset Requirements
For reliability purposes, power supplies must power up simultaneously, or in the following sequence:
VSS, VDD, VDDQ, VREF and inputs.
Power supplies must power down simultaneously, or in the reverse sequence.
After power supplies power up, the following start-up sequence must be followed.
Step 1 (Recommended, but not required): Assert RST High for at least 1ms.
While RST is asserted high:
• Read and Write operations are ignored.
Note: If possible, RST should be asserted High before input clocks (begin toggling, and remain asserted High until input clocks are
stable and toggling within specification, in order to prevent unstable, out-of-spec input clocks from causing trouble in the SRAM.
Step 2: Begin toggling input clocks.
After input clocks begin toggling, but not necessarily within specification:
• CQ, CQ begin toggling, but not necessarily within specification.
Step 3: Wait until input clocks are stable and toggling within specification.
Step 4: De-assert RST Low (if asserted High).
Step 5: Wait at least 160K (163,840) cycles for driver and ODT impedances to calibrate.
After the impedances have calibrated:
• CQ, CQ begin toggling within specification.
Step 6: Begin initiating Read and Write operations.
Reset Usage
Although not generally recommended, RST may be asserted High at any time after completion of the initial power-up sequence
described above, to reset the SRAM control logic to its initial power-on state. However, whenever RST is subsequently de-asserted
Low (as in Step 4 in the power up sequence), at least 160K NOP cycles must be initiated (as in Step 5 in the power-up sequence)
before Read and Write operations are initiated.
Note: Memory array content may be perturbed/corrupted when RST is asserted High.


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