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2SD1758 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Part # 2SD1758
Description  TO-251-3L Plastic-Encapsulate Transistors
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Manufacturer  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Direct Link  http://www.cj-elec.com/en/
Logo JIANGSU - Jiangsu Changjiang Electronics Technology Co., Ltd

2SD1758 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
2SD1758 TRANSISTOR (NPN)
FEATURES
Low VCE(sat)
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
32
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
2
A
PC
Collector dissipation
1.2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless other wise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=50μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
32
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=20V, IE=0
1
μA
Emitter cut-off current
IEBO
VEB=4V, IC=0
1
μA
DC current gain
hFE
VCE=3V, IC=500mA
82
390
Collector-emitter saturation voltage
VCE(sat)
IC=2A, IB=0.2A
0.8
V
Transition frequency
fT
VCE=5V, IC=50mA, f=100MHz
100
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
30
pF
CLASSIFICATION OF h FE
Rank
P
Q
R
Range
82-180
120-270
180-390
TO-251-3L
1.BASE
2.COLLECTOR
3.EMITTER
www.cj-elec.com
1
C,Nov,2014


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