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2SD2136 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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2SD2136 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page TO – 126 1. EMITTER 2. COLLECTOR 3. BASE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD2136 TRANSISTOR (NPN) FEATURES High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current 3 A PC Collector Power Dissipation 1.25 W RθJA Thermal Resistance From Junction To Ambient 100 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ D2136 z XXX 0$5.,1* Equivalent Circuit D2136 'HYLFHFoGH Solid dot= Green molding compound device, if none, the normal device ;;; &ode ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2SD2136 TO-126 Bulk 2SD2136-TU TO-126 Tube www.cj-elec.com 1 D,Aug,2017 60pcs/Tube 200pcs/Bag |
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