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VOL628A Datasheet(HTML) 2 Page - Vishay Siliconix

Part No. VOL628A
Description  Optocoupler, Phototransistor Output, AC Input, Low Input Current
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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VOL628A Datasheet(HTML) 2 Page - Vishay Siliconix

   
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VOL628A
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 13-Oct-15
2
Document Number: 82401
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices.
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
Power dissipation
Pdiss
100
mW
Forward current
IF
± 60
mA
Junction temperature
Tj
125
°C
OUTPUT
Collector emitter voltage
VCEO
80
V
Emitter collector voltage
VECO
7V
Collector current
IC
50
mA
tp/T = 0.5, tp < 10 ms
IC
100
mA
Power dissipation
Pdiss
150
mW
Junction temperature
Tj
125
°C
COUPLER
Total power dissipation
Ptot
250
mW
Storage temperature range
Tstg
-55 to +125
°C
Ambient temperature range
Tamb
-55 to +110
°C
Soldering temperature (1)
≤ 10 s
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = ± 5 mA
VF
-
1.16
1.5
V
Reverse current
VR = 6 V
IR
--
100
μA
Capacitance
VR = 0 V, f = 1 MHz
CO
-45
-
pF
OUTPUT
Collector emitter leakage current
VCE = 10 V, IF = 0 A
ICEO
-
10
200
nA
Collector emitter capacitance
VCE = 5 V, f = 1 MHz
CCE
-7
-
pF
COUPLER
Collector emitter
saturation voltage
IC = 0.2 mA, IF = ± 1 mA
VOL628A
VCEsat
-
0.25
0.4
V
IC = 0.2 mA, IF = ± 1 mA
VOL628A-1T
VCEsat
-
0.25
0.4
V
IC = 0.32 mA, IF = ± 1 mA
VOL628A-2T
VCEsat
-
0.25
0.4
V
IC = 0.5 mA, IF = ± 1 mA
VOL628A-3T
VCEsat
-
0.25
0.4
V
Coupling capacitance
f = 1 MHz
CC
-0.25-
pF
0
50
100
150
200
250
300
0
20
40
60
80
100
120
T
amb - Ambient Temperature (°C)
Coupled device
Phototransistor
IR-diode


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