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K3010PG Datasheet(PDF) 2 Page - Vishay Siliconix

Part # K3010PG
Description  Optocoupler, Phototriac Output, Non-Zero Crossing
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

K3010PG Datasheet(HTML) 2 Page - Vishay Siliconix

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K3010P, K3010PG Series
www.vishay.com
Vishay Semiconductors
Rev. 2.2, 01-Jun-12
2
Document Number: 83504
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to wave profile for soldering conditions for through hole devices (DIP) “Assembly Instructions” (www.vishay.com/doc?80054)
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(1) Test voltage must be applied within dV/dt ratings.
(2) IFT is defined as a minimum trigger current.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5V
Forward current
IF
80
mA
Forward surge current
tp
≤ 10 μs
IFSM
3A
Power dissipation
Pdiss
100
mW
Junction temperature
Tj
100
°C
OUTPUT
Off state output terminal voltage
VDRM
250
V
On state RMS current
ITRM
100
mA
Peak surge current, non-repetitive
tp
≤ 10 ms
ITMS
1.5
A
Power dissipation
Pdiss
300
mW
Junction temperature
Tj
100
°C
COUPLER
Isolation test voltage (RMS)
t = 1 s
VISO
5300
VRMS
Total power dissipation
Ptot
350
mW
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to + 100
°C
Soldering temperature (1)
2 mm from case, t
≤ 10 s
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.25
1.6
V
Junction capacitance
VR = 0, f = 1 MHz
Cj
50
pF
OUTPUT
Forward peak off-state voltage
(repetitive)
IRDM = 100 nA
VDRM (1)
250
V
Peak on-state voltage
ITM = 100 mA
VTM
1.5
3
V
Critical rate of rise of off-state voltage
IFT = 0, IFT = 30 mA
dV/dtcr
10
V/μs
dV/dtcrq
0.1
0.2
V/μs
COUPLER (2)
Collector emitter trigger current
VS = 3 V, RL = 150
Ω
K3010P
IFT
815
mA
K3010PG
IFT
815
mA
K3011P
IFT
510
mA
K3011PG
IFT
510
mA
K3012P
IFT
25
mA
K3012PG
IFT
25
mA
Holding current
IF = 10 mA, VS
≥ 3 V
IH
100
μA


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