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K3010PG Datasheet(PDF) 2 Page - Vishay Siliconix |
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K3010PG Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page K3010P, K3010PG Series www.vishay.com Vishay Semiconductors Rev. 2.2, 01-Jun-12 2 Document Number: 83504 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to wave profile for soldering conditions for through hole devices (DIP) “Assembly Instructions” (www.vishay.com/doc?80054) Notes • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (1) Test voltage must be applied within dV/dt ratings. (2) IFT is defined as a minimum trigger current. ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 5V Forward current IF 80 mA Forward surge current tp ≤ 10 μs IFSM 3A Power dissipation Pdiss 100 mW Junction temperature Tj 100 °C OUTPUT Off state output terminal voltage VDRM 250 V On state RMS current ITRM 100 mA Peak surge current, non-repetitive tp ≤ 10 ms ITMS 1.5 A Power dissipation Pdiss 300 mW Junction temperature Tj 100 °C COUPLER Isolation test voltage (RMS) t = 1 s VISO 5300 VRMS Total power dissipation Ptot 350 mW Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Soldering temperature (1) 2 mm from case, t ≤ 10 s Tsld 260 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 50 mA VF 1.25 1.6 V Junction capacitance VR = 0, f = 1 MHz Cj 50 pF OUTPUT Forward peak off-state voltage (repetitive) IRDM = 100 nA VDRM (1) 250 V Peak on-state voltage ITM = 100 mA VTM 1.5 3 V Critical rate of rise of off-state voltage IFT = 0, IFT = 30 mA dV/dtcr 10 V/μs dV/dtcrq 0.1 0.2 V/μs COUPLER (2) Collector emitter trigger current VS = 3 V, RL = 150 Ω K3010P IFT 815 mA K3010PG IFT 815 mA K3011P IFT 510 mA K3011PG IFT 510 mA K3012P IFT 25 mA K3012PG IFT 25 mA Holding current IF = 10 mA, VS ≥ 3 V IH 100 μA |
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