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SCS210KE2 Datasheet(PDF) 1 Page - Rohm |
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SCS210KE2 Datasheet(HTML) 1 Page - Rohm |
1 / 6 page www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Datasheet SCS210KE2 SiC Schottky Barrier Diode *1 Tc=148°C/Tc=150°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10 s square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C *7 Per leg / Both legs *(Per leg / Both legs) 18/36* 4 °C °C Tj Tstg 175 55 to 175 Range of storage temperature Absolute maximum ratings (Tj = 25°C) Surge no repetitive forward current *7 Reverse voltage (repetitive peak) Unit Value Repetitive peak forward current *7 1200 Total power disspation *7 Junction temperature VR IF IFSM IFRM PD Reverse voltage (DC) Continuous forward current *7 80/170* 6 23/46* 2 A A VRM 1200 5/10* 1 24/49* 5 87/170* 3 A Tube - Type Packaging Reel size (mm) C SCS210KE2 Basic ordering unit (pcs) Tape width (mm) - 30 Marking Packing code Features 17nC 1) Shorter recovery time A W Symbol Construction Silicon carbide epitaxial planer type Parameter V V A 3) High-speed switching possible Outline Inner circuit Packaging specifications TO-247 2) Reduced temperature dependence 1200V 5A/10A* VR IF QC (1) Anode (2) Cathode (3) Anode (1) (3) (2) (1) (2) (3) 1/4 2017.06 - Rev.C |
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