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Datasheet

SCS215AG

SiC Schottky Barrier Diode

*1 Tc=135°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10

s square, Tj=25°C

*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C

200*

3

43*

4

°C

°C

Tj

Tstg

175

55 to 175

A

Range of storage temperature

Absolute maximum ratings (Tj = 25°C)

Surge no repetitive forward current

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Continuous forward current

Unit

Value

Repetitive peak forward current

Total power disspation

Junction temperature

650

650

15*

1

61*

5

110*

6

55*

2

A

A

Tube

-

Type

Packaging

Reel size (mm)

C

SCS215AG

Basic ordering unit (pcs)

Tape width (mm)

-

50

Marking

Packing code

Features

23nC

1) Shorter recovery time

A

W

Symbol

Construction

Silicon carbide epitaxial planer type

Parameter

V

V

A

3) High-speed switching possible

Outline

Inner circuit

Packaging specifications

TO-220AC

2) Reduced temperature dependence

650V

15A

(3)

(2)

(1)

(1) Cathode

(2) Cathode

(3) Anode

(1)

(2)

(3)

1/4

2017.06 - Rev.C