KTA1505 datasheet(1/4 Pages) JIANGSU

Part #	KTA1505

Description	SOT-23 Plastic-Encapsulate Transistors

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

KTA1505

TRANSISTOR（PNP）

FEATURES

· Excellent h

FE linearity:

· Complementary to KTC3876

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-100μA,IE=0

-35

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA,IB=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-35V,IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μA

hFE(1)

VCE=-1V,IC=-100mA

70

400

DC current gain

hFE(2)

VCE=-6V,IC=-400mA

25

Collector-emitter saturation voltage

VCE(sat)

IC=-100mA,IB=-10mA

-0.25

V

Base-emitter voltage

VBE

VCE=-1V,IC=-100mA

-1

V

Transition frequency

fT

VCE=-6V,IC=-20mA

200

MHz

Collector output capacitance

Cob

VCB=-6V,IE=0,f=1MHz

13

pF

CLASSIFICATION OF hFE(1)

Rank

O

Y

GR

Range

70-140

120-240

200-400

Marking

AZO

AZY

AZG

SOT-23

1.

BASE

2.

EMITTER

3.

COLLECTOR

www.cj-elec.com

1

A,Jun,2014

www.cj-elec.com

B,Jun,2014

JC T

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-35

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current

-500

mA

PC

Collector Power Dissipation

150

mW

RΘJA

Thermal Resistance From Junction To Ambient

833

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55～+150

℃

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