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S2206 Datasheet(PDF) 2 Page - Rohm

Part # S2206
Description  N-channel SiC power MOSFET bare die
Download  13 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

S2206 Datasheet(HTML) 2 Page - Rohm

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Data Sheet
S2206
*1 Limited only by maximum temperature allowed.
*2 PW
 10s, Duty cycle  1%
*3 Example of acceptable Vgs waveform
*4 Pulsed
Static drain - source
on - state resistance
RDS(on)
*4
VGS = 18V, ID = 10A
m
W
Tj = 25°C
-
120
156
Tj = 125°C
-
149
-
-
W
Gate input resistance
RG
f = 1MHz, open drain
-
13.8
V
Gate - Source leakage current
IGSS-
VGS = -6V, VDS = 0V
-
-
Gate - Source leakage current
IGSS+
VGS = +22V, VDS = 0V
-
-
100
nA
-100
nA
Gate threshold voltage
VGS (th)
VDS = VGS, ID = 3.3mA
1.6
2.8
4.0
Drain - Source breakdown
voltage
V(BR)DSS
VGS = 0V, ID = 1mA
650
-
A
Tj = 25°C
-
1
10
Tj = 150°C
-
2
-
Zero gate voltage
drain current
IDSS
VDS = 650V, VGS = 0V
Unit
Min.
Typ.
Max.
-
V
lElectrical characteristics (T
a = 25°C)
Parameter
Symbol
Conditions
Values
t
surge
t
surge
+26V
+22V
0V
-6V
-10V
2/11
2016.02 - Rev.C


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