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TS8514VB-SF-F Datasheet(PDF) 1 Page - Vishay Siliconix |
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TS8514VB-SF-F Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page TS8514VB www.vishay.com Vishay Semiconductors Rev. 1.0, 11-Apr-17 1 Document Number: 84403 For technical questions, contact: optochipsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Specification of High Power IR Emitting Diode Chip DESCRIPTION TS8514VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip (L x W x H in mm): 0.355 x 0.355 x 0.17 • Peak wavelength: λ = 855 nm • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore sold die may not perform on an equivalent basis to standard package products. Note • Test condition see table “Basic Characteristics” Note • MOQ: minimum order quantity PRODUCT SUMMARY COMPONENT φe (mW) ϕ (deg) λp (nm) tr (ns) TS8514VB 38 60 855 10 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TS8514VB-SF-F Wafer sawn on foil MOQ: 220 000 pcs Chip ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Forward current IF 100 mA Reverse voltage VR 5V Surge forward current tp/T = 0.1, tp = 100 μs IFSM 1A Junction temperature Tj 100 °C Operating temperature range Tamb -40 to +100 °C Storage temperature range chip Tstg1 -40 to +110 °C Storage temperature range on foil Tstg2 -40 to +40 °C |
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