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DTA143EE Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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DTA143EE Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 2 page 01-Jun-2002 Rev. A Page 2 of 2 Elektronische Bauelemente Absolute maximum ratings(Ta=25℃) Limits (DTA143E□ ) Parameter Symbol E UA CA SA Unit Supply voltage VCC 0 5 - V Input voltage VIN 1 ~ 0 3 - 0 V IO 0 0 1 - Output current IC(MAX) 0 0 1 - mA Power dissipation Pd 150 200 300 mW Junction temperature Tj 0 5 1 ℃ Storage temperature Ts 1 ~ 5 5 - g t 50 ℃ Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions VI(off) -0.5 VCC=-5V ,IO=-100µA Input voltage VI(on) -3 V VO=-0.3V ,IO=-20 mA Output voltage VO(on) -0.3 V IO/II=-10mA/-0.5mA Input current II -1.8 mA VI=-5V Output current IO(off) -0.5 µA VCC=-50V ,VI=0 DC current gain GI 30 VO=-5V ,IO=-10mA Input resistance R1 3.29 4.7 6.11 KΩ Resistance ratio R2/R1 0.8 1 1.2 Transition frequency fT 250 MHz VO=-10V ,IO=5mA,f=100MHz Typical Characteristics PNP Digital Transistors (Built-in Resistors) http://www.SeCoSGmbH.com Any changing of specification will not be informed individual DTA143EE/DTA143EUA/DTA143ECA / DTA143ESA |
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