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SSA55H12J Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSA55H12J Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 3 page SSA55H12J 120A, 55V, RDS(ON) 5.5 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 28-Jun-2016 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO-220J-A RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SSA55H12J uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. This device is suitable for the use in a wide variety of applications. FEATURES High density cell design for ultra low RDS(on) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special processing technology for high ESD capability APPLICATION Power switching application Hard switched and high frequency circuits Uninterruptible power supply ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 55 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 120 A Pulsed Drain Current IDM 420 A Single Pulsed Avalanche Energy 1 EAS 1100 mJ Thermal Resistance from Junction to Ambient RθJA 62.5 °C/ W Maximum Lead Temperature for Soldering Purposes@ 1/8’’ from Case for 5 seconds TL 260 °C Junction and Storage Temperature Range TJ, TSTG 150, -55~150 °C 1 Gate 3 Source 2 Drain REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 9.91 10.25 I 4.98 5.18 B 3.4 3.8 J 2.85 3.25 C 2.65 2.95 K 4.4 4.6 D 12.65 12.95 L 1.2 1.4 E 1.17 1.37 M 8.95 9.75 F 0.71 0.91 N 2.25 2.55 G 12.9 13.4 Q 0.33 0.65 H 2.540 TYP. |
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