SL10T80 datasheet(1/3 Pages) ZSELEC

Part #	SL10T80

Description	10A SURFACE MOUNT SCHOTTKY BARRIER DIODE

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Manufacturer	ZSELEC [Zibo Seno Electronic Engineering Co.,Ltd]

Direct Link	http://www.senocn.com/en/index.html

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Case:TO-277B Molded Plastic "Green" Molding Compound

Excellent High Temperature Stability

Lead Free: For RoHS/Lead Free Version

High Thermal Reliability

Ultra Low Power Loss, High Efficiency

High Foward Surge Capability

High Junction Temperture

Bypass Diodes for Solar Panels

Features

!

Mechanical Data

!

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

!

Polarity: Cathode Band

!

Mounting Position: Any

!

Marking: Type Number

Maximum Ratings and Electrical Characteristics @T

A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

1 of 3

!

Patented Super Barrier Rectifier Technology

!

Top View

Bottom View

LEFT PIN

RIGHT PIN

Note: Pins Left & Right must

be electrically connected

at the printed circuit board.

BOTTOMSIDE

HEAT SINK

Z ibo Seno Electronic Engineering Co., Ltd.

www.senocn.com

SL10T80-SL10T200

!

Schottky Barrier Chip

10T120

10T80

SL

-55 to +150

56

DC

At Rated DC Blocking Voltage

T =100

Peak Reverse Curent

T =25

Junctionto Ambient

Typical Thermal Resistance

Average Rectified Output Current

(Note1)

Unit

V

A

mA

℃

℃ /W

storage temperature range

Note:1.Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case.

2.Fr-4pcb.2oz.Copper,minimum recommend pad layout .18.8mm×14.4.Anode pad dimensions 5.6mm×14.4mm.

Operating junction temperature range

℃

0.3

10

VR(RMS)

Non-Repetitive Peak Forward Surge8.3ms

Single Half Sine-Wave Superimposed on rated

10

Parameter

Symbol

V RRM

80

DC blocking voltage

V

load(JEDEC Method)

Working Peak Reverse Voltage

Peak Repetitive Reverse Voltage

VRWM

V

A

200

RMS Rectified Voltage

(Note2)

IO

IFSM

V FM

IR

RθJA

RθJL

TJ

TSTG

A

SL

10T150

SL

10T200

SL

200

140

T =25

@IF=5A

℃

A

T =25

@IF=10A

℃

A

Typ

Max.

-

Forward Voltage Drop

T =25

@IF=1A

℃

A

0.38

0.50

0.63

0.57

A

t

I 2 t Rating for Fusing (t < 8.3ms)

2

2s

I

166

10T100

100

70

120

84

150

105

110

3.5

Typ

Max.

-

0.38

0.50

0.64

0.59

-

Typ

Max.

-

0.46

0.64

0.79

0.73

-

Typ

Max.

-

0.49

0.67

0.80

0.74

10A SURFACE MOUNT SCHOTTKY BARRIER DIODE

-

Typ

Max.

-

0.62

0.73

0.86

0.81

-

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