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SL10T80 Datasheet(PDF) 1 Page - Zibo Seno Electronic Engineering Co.,Ltd |
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SL10T80 Datasheet(HTML) 1 Page - Zibo Seno Electronic Engineering Co.,Ltd |
1 / 3 page Case:TO-277B Molded Plastic "Green" Molding Compound Excellent High Temperature Stability Lead Free: For RoHS/Lead Free Version High Thermal Reliability Ultra Low Power Loss, High Efficiency High Foward Surge Capability High Junction Temperture Bypass Diodes for Solar Panels Features ! ! ! ! Mechanical Data ! ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Mounting Position: Any ! Marking: Type Number Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 1 of 3 ! Patented Super Barrier Rectifier Technology ! ! ! Top View Bottom View LEFT PIN RIGHT PIN Note: Pins Left & Right must be electrically connected at the printed circuit board. BOTTOMSIDE HEAT SINK Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com SL10T80-SL10T200 SL10T80-SL10T200 ! Schottky Barrier Chip 10T120 10T80 SL -55 to +150 -55 to +150 56 DC At Rated DC Blocking Voltage T =100 Peak Reverse Curent T =25 Junctionto Ambient Typical Thermal Resistance Average Rectified Output Current (Note1) Unit V A mA ℃ ℃ ℃ /W storage temperature range Note:1.Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case. 2.Fr-4pcb.2oz.Copper,minimum recommend pad layout .18.8mm×14.4.Anode pad dimensions 5.6mm×14.4mm. Operating junction temperature range ℃ ℃ 0.3 10 VR(RMS) Non-Repetitive Peak Forward Surge8.3ms Single Half Sine-Wave Superimposed on rated 10 Parameter Symbol V RRM 80 DC blocking voltage V load(JEDEC Method) Working Peak Reverse Voltage Peak Repetitive Reverse Voltage VRWM V V A 200 RMS Rectified Voltage (Note2) IO IFSM V FM IR RθJA RθJL TJ TSTG A A SL SL 10T150 SL 10T200 SL 200 140 T =25 @IF=5A ℃ A T =25 @IF=10A ℃ A Typ Max. - Forward Voltage Drop T =25 @IF=1A ℃ A 0.38 0.50 0.63 0.57 A t I 2 t Rating for Fusing (t < 8.3ms) 2 2s I 166 10T100 100 70 120 84 150 105 110 3.5 Typ Max. - 0.38 0.50 0.64 0.59 - Typ Max. - 0.46 0.64 0.79 0.73 - Typ Max. - 0.49 0.67 0.80 0.74 10A SURFACE MOUNT SCHOTTKY BARRIER DIODE - - Typ Max. - 0.62 0.73 0.86 0.81 - |
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Similar Description - SL10T80 |
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