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SI4565DY Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4565DY Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 8 page  FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested D UIS Tested APPLICATIONS D CCFL Inverter Si4565DY Vishay Siliconix New Product Document Number: 73224 S-50033—Rev. A, 17-Jan-05 www.vishay.com 1 N- and P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Qg (Typ) N-Channel 40 0.040 @ VGS = 10 V 5.2 8 N-Channel 40 0.045 @ VGS = 4.5 V 4.9 8 P Channel 40 0.054 @ VGS = −10 V −4.5 9 P-Channel −40 0.072 @ VGS = −4.5 V −3.9 9 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4565DY—E3 Si4565DY-T1—E3 (with Tape and Reel) S2 G2 D2 P-Channel MOSFET N-Channel MOSFET G1 D1 S1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel P-Channel Parameter Symbol 10 secs Steady State 10 secs Steady State Unit Drain-Source Voltage VDS 40 −40 V Gate-Source Voltage VGS "12 "16 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 5.2 3.9 −4.5 −3.3 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 4.2 3.1 −3.6 −2.7 Pulsed Drain Current IDM 30 A Continuous Source Current (Diode Conduction)a IS 1.7 0.9 −1.7 −0.9 A Avalanche Current L = 0 1 mH IAS 13 16 Single Pulse Avalanche Energy L = 0.1 mH EAS 8.5 13 mJ Maximum Power Dissipatioa TA = 25_C PD 2.0 1.1 2 1.1 W Maximum Power Dissipatioa TA = 70_C PD 1.3 0.7 1.3 0.7 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ Max Typ Max Unit Maximum Junction to Ambienta t v 10 sec R 52 62.5 50 62.5 Maximum Junction-to-Ambienta Steady State RthJA 90 110 85 110 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 32 40 30 40 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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