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BQ7790509PWR Datasheet(PDF) 7 Page - Texas Instruments |
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BQ7790509PWR Datasheet(HTML) 7 Page - Texas Instruments |
7 / 47 page 7 bq77904, bq77905 www.ti.com SLUSCM3G – JUNE 2016 – REVISED SEPTEMBER 2017 Product Folder Links: bq77904 bq77905 Submit Documentation Feedback Copyright © 2016–2017, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) bq77904 bq77905 UNITS PW (TSSOP) 20 PINS RθJA Junction-to-ambient thermal resistance 98.4 °C/W RθJC(top) Junction-to-case (top) thermal resistance 37 °C/W RθJB Junction-to-board thermal resistance 49.3 °C/W ψJT Junction-to-top characterization parameter 2.9 °C/W ψJB Junction-to-board characterization parameter 48.7 °C/W (1) Based on a 10 KΩ pull-up and 103AT thermistor. 7.5 Electrical Characteristics Typical values stated at TA = 25ºC and VDD = 16 V (bq77904) or 20 V (bq77905). MIN and MAX values stated with TA = –40ºC to +85ºC and VDD = 3 to 20 V (bq77904) or VDD = 3 to 25 V (bq77905) unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VOLTAGE V(POR) POR threshold VDD rising, 0 to 6 V 4 V V(SHUT) Shutdown threshold VDD falling, 6 to 0 V 2 3.25 V V(AVDD) AVDD voltage C(VDD) = 1 µF 2.1 2.5 3.25 V SUPPLY AND LEAKAGE CURRENT ICC Normal mode current (bq77904/bq77905) Cell1 through Cell5 = 4 V, VDD = 20 V (bq77905) 6 9 µA I(CFAULT) Fault condition current State comparator on 8 12 µA IOFF Shutdown mode current VDD < VSHUT 0.5 µA ILKG(OW_DIS) Input leakage current at VCx pins All cell voltages = 4 V, Open Wire disable configuration –100 0 100 nA ILKG(100nA) Open-wire sink current at VCx pins All cell voltages = 4 V, 100 nA configuration 30 110 175 nA ILKG(200nA) Open-wire sink current at VCx pins All cell voltages = 4 V, 200 nA configuration 95 210 315 nA ILKG(400nA) Open-wire sink current at VCx pins All cell voltages = 4 V, 400 nA configuration 220 425 640 nA PROTECTION ACCURACIES VOV Overvoltage programmable threshold range 3000 4575 mV VUV Undervoltage programmable threshold range 1200 3000 mV V(VA) OV, UV, detection accuracy TA = 25ºC, OV detection accuracy –10 10 mV TA = 25ºC, UV detection accuracy –18 18 mV TA = 0 to 60ºC –28 26 mV TA = –40 to 85ºC –40 40 mV VHYS(OV) OV hysteresis programmable threshold range 0 400 mV VHYS(UV) UV hysteresis programmable threshold range 200 800 mV VOTD Overtemperature in discharge programmable threshold Threshold for 65°C(1) 19.71 20.56 21.86 %VTB Threshold for 70°C (1) 17.36 18.22 19.51 %VTB VOTD(REC) Overtemperature in discharge recovery Recovery threshold at 55°C for when VOTD is at 65°C (1) 25.24 26.12 27.44 %VTB Recovery threshold at 60°C for when VOTD is at 70°C (1) 22.12 23.2 24.24 %VTB |
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