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BCP120T Datasheet(PDF) 1 Page - BeRex Corporation |
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BCP120T Datasheet(HTML) 1 Page - BeRex Corporation |
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1 / 5 page  BCP120T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm) The BeRex BCP120T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 1200 micron gate width making the product ideally suited for amplifier applications where high-gain and medium power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications. The BCP120T is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability. PRODUCT FEATURES • 32 dBm Typical Output Power • 11 dB Typical Gain @ 12 GHz • 60% PAE Typical @12 GHz • 0.25 X 1200 µm Recessed Gate APPLICATIONS • Commercial • Military / Hi-Rel. • Test & Measurement DC CHARACTERISTICS Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS MIN. TYPICAL MAX. UNIT Idss Saturated Drain Current (Vgs = 0V, Vds = 1.0V) 240 360 480 mA Gm Transconductance (Vds = 2V, Vgs = 50% Idss) 480 mS Vp Pinch-off Voltage (Ids = 1.2 mA, Vds = 2V) -2.5 -1.1 -0.5 V BVgd Drain Breakdown Voltage (Igd = 0.8 mA, source open) -15 -12 V BVgs Source Breakdown Voltage (Ig = 0.8 mA, drain open) -13 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 41 °C/W ELECTRICAL CHARACTERISTICS (TUNED FOR POWER) Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS TEST FREQ. MIN. TYPICAL MAX. UNIT P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 31.0 32.0 32.0 dBm G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 10.0 11.0 8.0 dB PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 60 55 % www.berex.com BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595 January 2015 Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7 |
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